发明名称 Cu−Ga合金スパッタリングターゲット及びその製造方法
摘要 PROBLEM TO BE SOLVED: To provide a high-quality Cu-Ga alloy sputtering target containing sodium (Na) that may add Na to a sputter film.SOLUTION: A Cu-Ga alloy sputter target is produced as follows: a sodium compound mixed alloy powder is prepared by mixing a Cu-Ga alloy powder and a sodium compound; a sodium-containing material coated alloy powder in which the Cu-Ga alloy powder is surrounded by a sodium-containing material is prepared by heating a mixed powder of the Cu-Ga alloy powder and a powder of a sodium-containing organic material; and then the sodium compound mixed alloy powder and the sodium-containing material coated alloy powder are mixed and sintered by a hot-press.
申请公布号 JP5928237(B2) 申请公布日期 2016.06.01
申请号 JP20120176172 申请日期 2012.08.08
申请人 住友金属鉱山株式会社 发明人 安東 勲雄;佐藤 恵理子
分类号 C23C14/34;B22F1/02;B22F3/14;C22C1/05;C22C9/00;H01L51/48 主分类号 C23C14/34
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