发明名称 |
PROCESS FOR PRODUCTION OF GRAPHENE/SILICON CARBIDE CERAMIC COMPOSITES |
摘要 |
We provide a method for the in situ development of graphene containing silicon carbide (SiC) matrix ceramic composites, and more particularly to the in situ graphene growth within the bulk ceramic through a single-step approach during SiC ceramics densification using an electric current activated/assisted sintering (ECAS) technique. This approach allows processing dense, robust, highly electrical conducting and well dispersed nanocomposites having a percolated graphene network, eliminating the handling of potentially hazardous nanostructures. Graphene/SiC components could be used in technological applications under strong demanding conditions where good electrical, thermal, mechanical and/or tribological properties are required, such as micro and nanoelectromechanical systems (MEMS and NEMS), sensors, actuators, heat exchangers, breaks, components for engines, armours, cutting tools, microturbines or microrotors. |
申请公布号 |
EP2897921(A4) |
申请公布日期 |
2016.06.01 |
申请号 |
EP20130839518 |
申请日期 |
2013.09.19 |
申请人 |
THE PENN STATE RESEARCH FOUNDATION;CONSEJO SUPERIOR DE INVESTIGACIONES CIENTÍFICAS |
发明人 |
MIRANZO, PILAR;OCAL, CARMEN;OSENDI, MARIA, ISABEL;BELMONTE, MANUEL;RAMIREZ, CRISTINA;ROMAN-MANSO, BENITO;GUITIERREZ, HUMBERTO, R.;TERRONES, MAURICIO |
分类号 |
B82Y30/00;C04B35/573;C04B35/575;C04B35/577;C04B35/626;C04B35/64;C04B35/645;H01B1/18 |
主分类号 |
B82Y30/00 |
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