Epitaxial layer wafer having void for separating growth substrate therefrom and semiconductor device fabricated using the same

摘要

An epitaxial wafer includes a growth substrate, a mask pattern disposed on the growth substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern and including a first void disposed on the masking region. The first void includes a lower void disposed between a lower surface of the epitaxial layer and the masking region, and an upper void extending from the lower void into the epitaxial layer, the lower void having a greater width than the upper void.

主权项

1. An epitaxial wafer, comprising:
a growth substrate; a mask pattern disposed on the growth substrate and comprising a masking region and an opening region; and an epitaxial layer covering the mask pattern and comprising a first void disposed on the masking region, wherein the first void comprises:
a lower void disposed between a lower surface of the epitaxial layer and the masking region; andan upper void extending from the lower void into the epitaxial layer,wherein the lower void has a greater width than the upper void.