Power semiconductor device and method of fabricating the same

摘要

There is provided a power semiconductor device, including a first conductive type drift layer; a second conductive type body layer formed on the drift layer, a second conductive type collector layer formed below the drift layer; a first gate formed by penetrating through the body layer and a portion of the drift layer, a first conductive type emitter layer formed in the body layer and formed to be spaced apart from the first gate, a second gate covering upper portions of the body layer and the emitter layer and formed as a flat type gate on the first gate, and a segregation stop layer formed between contact surfaces of the first and second gates with the body layer, the emitter layer, and the drift layer.

主权项

1. A power semiconductor device, comprising:
a first conductive type drift layer; a second conductive type body layer formed on the drift layer; a second conductive type collector layer formed below the drift layer; a first gate formed by penetrating through the body layer and a portion of the drift layer; a gate insulating layer formed on the first gate; a first conductive type emitter layer formed in the body layer, formed to be spaced apart from the first gate, and not in contact with the gate insulating layer; a second gate covering upper portions of the body layer and the emitter layer and formed as a flat type gate on the first gate; and a segregation stop layer formed between contact surfaces of the first and second gates with the body layer, the emitter layer, and the drift layer, wherein all surfaces of the first conductive type emitter layer are not in contact with the gate insulating layer.