| 发明名称 | Semiconductor device and production device therefor | ||
| 摘要 | A semiconductor device includes a plurality of trench gates extending in a first direction and arranged with a space between one another in a second direction which is orthogonal to the first direction. Each of the plurality of trench gates includes: a first portion opened on a front surface of the semiconductor substrate; a second portion extending from the first portion in a direction inclined relative to a depth direction of the semiconductor substrate toward a positive direction of the second direction; and a third portion extending from the first portion in a direction inclined relative to the depth direction of the semiconductor substrate toward a negative direction of the second direction. | ||
| 申请公布号 | US9356107(B2) | 申请公布日期 | 2016.05.31 |
| 申请号 | US201214430655 | 申请日期 | 2012.10.15 |
| 申请人 | TOYOTA JIDOSHA KABUSHIKI KAISHA | 发明人 | Kurokawa Yuto |
| 分类号 | H01L29/76;H01L29/94;H01L29/423;H01L21/3065;H01J37/32;H01L29/66;H01L29/739;H01L29/78;H01L21/67;H01L29/06;H01L29/10 | 主分类号 | H01L29/76 |
| 代理机构 | Oliff PLC | 代理人 | Oliff PLC |
| 主权项 | 1. A semiconductor device comprising: a semiconductor substrate; and a plurality of trench gates extending in a first direction and arranged with a space between one another in a second direction which is orthogonal to the first direction, wherein each of the plurality of trench gates comprises: an opening portion, and a bottom portion branched into first and second branches and extending in two directions such that there is a gap separating the first and second branches along the second direction, the opening portion is a first portion opened on a front surface of the semiconductor substrate, and the bottom portion is configured by a second portion as the first branch extending from the first portion in a direction inclined relative to a depth direction of the semiconductor substrate toward a positive direction of the second direction, anda third portion as the second branch extending from the first portion in a direction inclined relative to the depth direction of the semiconductor substrate toward a negative direction of the second direction,the bottom portion being without a central portion extending along the depth direction in the gap between the second portion and the third portion so that no portion of the bottom portion is disposed between the second portion and the third portion along the second direction. | ||
| 地址 | Toyota JP | ||