Method for preventing extreme low-K (ELK) dielectric layer from being damaged during plasma process

摘要

A method for forming an interconnect structure is provided. The method includes providing a substrate. The method also includes forming a dielectric layer on the substrate, and the dielectric layer includes an extreme low-k (ELK) dielectric layer. The method includes forming a via hole in the dielectric layer and forming a photoresist in the via hole and on the dielectric layer. The method also includes removing the photoresist by a plasma process using a CxHyOz gas and forming a conductive structure in the via hole.

主权项

1. A method for forming an interconnect structure, comprising:
providing a substrate; forming a dielectric layer on the substrate, wherein the dielectric layer comprises an extreme low-k (ELK) dielectric layer; forming a via hole in the dielectric layer; forming a photoresist in the via hole and on the dielectric layer; removing the photoresist by a plasma process using a CxHyOz gas; and forming a conductive structure in the via hole.