发明名称 |
Semiconductor laser device |
摘要 |
A semiconductor laser device capable of high output is provided. A semiconductor laser diode includes: a substrate; and a semiconductor stacked structure, which is formed on the substrate through crystal growth. The semiconductor stacked structure includes: an n-type (Alx1Ga1-x1))0.51In0.49P cladding layer and a p-type (Alx1Ga(1-x1))0.51In0.49P cladding layer; an n-side Alx2Ga(1-x2)As guiding layer and a p-side Alx2Ga(1-x2)As guiding layer, which are sandwiched between the cladding layers; and an active layer, which is sandwiched between the guiding layers. The active layer is formed of a quantum well layer including an AlyGa(1-y)As(1-x3)Px3 layer and a barrier layer including an Alx4Ga(1-x4)As layer that are alternatively repetitively stacked for a plurality of periods. |
申请公布号 |
US9356432(B2) |
申请公布日期 |
2016.05.31 |
申请号 |
US201414186790 |
申请日期 |
2014.02.21 |
申请人 |
ROHM CO., LTD. |
发明人 |
Noma Tsuguki;Akutsu Minoru;Nishioka Yoshito |
分类号 |
H01S5/00;H01S5/343;B82Y20/00;H01S5/32;H01S5/20;H01S5/22;H01S5/34 |
主分类号 |
H01S5/00 |
代理机构 |
Rabin & Berdo, P.C. |
代理人 |
Rabin & Berdo, P.C. |
主权项 |
1. A semiconductor laser device, comprising:
a p-type cladding layer and an n-type cladding layer, including a phosphorus group compound semiconductor; a p-side guiding layer and an n-side guiding layer which are sandwiched between the p-type cladding layer and the n-type cladding layer, and include an arsenic group compound semiconductor, the p-side guiding layer and the n-side guiding layer each including an Alx2Ga(1-x2)As layer where (0≦x2≦1); an active layer, which is sandwiched between the p-side guiding layer and the n-side guiding layer, including a quantum well layer containing an arsenic group compound semiconductor; and a p-type band discontinuous buffer layer disposed over the p-type cladding layer, and including a phosphorus group compound semiconductor. |
地址 |
Kyoto JP |