| 发明名称 | Memristor with nanobridge structure | ||
| 摘要 | A nanobridge or microbridge comprising a non-magnetic alloy of at least a first and second metal, the metals being selected from Group 8, 9, 10 and 11, wherein the first metal is present in a range of 50-95 wt. %, and memristors comprising one or more of same. | ||
| 申请公布号 | US9356233(B2) | 申请公布日期 | 2016.05.31 |
| 申请号 | US201414290272 | 申请日期 | 2014.05.29 |
| 申请人 | TECHNISCHE UNIVERSITEIT DELFT | 发明人 | Kozlova Tatiana;Rudneva Maria;Zandbergen Hendrik Willem |
| 分类号 | H01L45/00;G11C13/00;G11C11/56 | 主分类号 | H01L45/00 |
| 代理机构 | Peacock Myers, P.C. | 代理人 | Myers Jeffrey D.;Peacock Myers, P.C. |
| 主权项 | 1. A nanobridge comprising a non-magnetic alloy of at least a first and second metal, the metals being selected from Group 8, 9, 10 and 11, wherein the first metal is present in a range of 50-95 wt. %, and the second metal is present in a range of 5-25 wt. %, wherein the nanobridge is polycrystalline, with an average grain size of 1 nm-10 μm, with a grain size varying from larger at a contact towards smaller in the middle, or vice versa. | ||
| 地址 | Delft NL | ||