Light-emitting device and method for manufacturing the same

摘要

A method for manufacturing a light-emitting device comprising the steps of: providing a substrate; forming a semiconductor epitaxial stack on the substrate; and forming multiple isolation trenches in the semiconductor epitaxial stack by using a laser beam irradiating the semiconductor epitaxial stack to define multiple light-emitting diode units wherein partial of the substrate is exposed by the isolation trenches.

主权项

1. A method for manufacturing a light-emitting device, comprising the steps of:
providing a substrate; forming a semiconductor epitaxial stack on the substrate, comprising:
forming a first conductive-type semiconductor layer on the substrate;forming an active layer on the first conductive-type semiconductor layer; andforming a second conductive-type semiconductor layer on the active layer; forming multiple mesas in the semiconductor epitaxial stack and exposing part of the first conductive-type semiconductor layer; and forming multiple isolation trenches in the semiconductor epitaxial stack by using a laser beam irradiating the semiconductor epitaxial stack to define multiple light-emitting diode units, wherein part of the substrate is exposed by the isolation trenches, and wherein a sidewall of the isolation trenches is roughened and/or the slope of the sidewall of the isolation trenches is larger than the slope of a sidewall of the mesas.