Composition for resist pattern-refinement, and fine pattern-forming method

摘要

A composition for resist pattern-refinement includes an ion represented by formula (1-1), an ion represented by formula (1-2), an ion represented by formula (2-1), an ion represented by formula (2-2) and a solvent. A total amount of the ions blended is no less than 50% by mass with respect to a sum of components other than the solvent. R1 represents a monovalent organic group having 1 to 30 carbon atoms or a fluorine atom; Z represents a single bond or a divalent linking group; R2 represents a single bond, a divalent hydrocarbon group having 1 to 10 carbon atoms or a divalent fluorinated hydrocarbon group having 1 to 10 carbon atoms; M+ represents a monovalent cation; and R3 represents a monovalent organic group having 1 to 30 carbon atoms.

主权项

1. A composition for resist pattern-refinement comprising an ion represented by formula (1-1), an ion represented by formula (1-2), an ion represented by formula (2-1), an ion represented by formula (2-2) and a solvent,
a total amount of the ions blended being no less than 50% by mass with respect to a sum of components other than the solvent,
R1—Z—R2—SO3−  (1-1)M+  (1-2)R3—SO3−  (2-1)H+  (2-2) wherein, in the formula (1-1), R1 represents a monovalent organic group having 1 to 30 carbon atoms or a fluorine atom; Z represents a single bond or a divalent linking group; and R2 represents a single bond, a divalent hydrocarbon group having 1 to 10 carbon atoms or a divalent fluorinated hydrocarbon group having 1 to 10 carbon atoms, in the formula (1-2), M+ represents a monovalent cation, and in the formula (2-1), R3 represents a monovalent organic group having 1 to 30 carbon atoms.