Method of making memory element with ion source layer comprised of two or more unit IO source layers

摘要

A method of making memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer.

主权项

1. A method, comprising forming a first electrode, a memory layer, and a second electrode in this order, wherein the memory layer includes:
(a) a resistance change layer containing an oxide, and (b) an ion source layer comprising a stacked structure of two or more unit ion source layers, each unit ion source layer including a first layer and a second layer, the first layer containing (i) one or more chalcogen elements selected from the group consisting of tellurium (Te), sulfur (S), selenium (Se) and any combination of them and (ii) an easy-to-move element that is easy to move in the memory layer, the first layer having a non-uniform distribution of the easy-to-move element proceeding from the first electrode to the second electrode, the second layer also containing a difficult-to-move element that is difficult to move in the memory layer, the easy-to-move element being able to diffuse more easily into the memory layer than the difficult-to-move element.