发明名称 Semiconductor device with self-aligned contact plugs
摘要 A semiconductor device includes subsurface structures extending from a main surface into a semiconductor portion, each subsurface structure including a gate electrode dielectrically insulated from the semiconductor portion. The semiconductor device further includes alignment plugs in a vertical projection of the subsurface structures, contact spacers extending along sidewalls of the alignment plugs tilted to the main surface, and contact plugs directly adjoining semiconductor mesas between the subsurface structures. The contact plugs are provided between opposing ones of the contact spacers.
申请公布号 US9355957(B2) 申请公布日期 2016.05.31
申请号 US201514685823 申请日期 2015.04.14
申请人 Infineon Technologies Austria AG 发明人 Poelzl Martin
分类号 H01L29/78;H01L23/528;H01L29/66;H01L29/06;H01L29/10;H01L29/417;H01L29/423;H01L29/739;H01L29/40 主分类号 H01L29/78
代理机构 Murphy, Bilak & Homiller, PLLC 代理人 Murphy, Bilak & Homiller, PLLC
主权项 1. A semiconductor device, comprising: subsurface structures extending from a main surface into a semiconductor portion, each subsurface structure comprising a gate electrode dielectrically insulated from the semiconductor portion; alignment plugs in a vertical projection of the subsurface structures; contact spacers extending along sidewalls of the alignment plugs tilted to the main surface; and contact plugs directly adjoining semiconductor mesas between the subsurface structures, the contact plugs provided between opposing ones of the contact spacers;wherein the alignment plugs comprise (i) gate contact spacers of a first auxiliary material along sidewalls of the contact spacer opposite to the contact plugs and (ii) gate contacts between the gate contact spacers assigned to a respective subsurface structure.
地址 Villach AT