Method of manufacturing semiconductor device

摘要

Some embodiments of the present invention relate to a semiconductor device and a method of manufacturing a semiconductor device capable of preventing the deterioration of electrical characteristics. A p-type collector region is provided on a surface layer of a backside surface of an n-type drift region. A p+-type isolation layer for obtaining reverse blocking capability is provided at the end of an element. In addition, a concave portion is provided so as to extend from the backside surface of the n-type drift region to the p+-type isolation layer. A p-type region is provided and is electrically connected to the p+-type isolation layer. The p+-type isolation layer is provided so as to include a cleavage plane having the boundary between the bottom and the side wall of the concave portion as one side.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a first semiconductor region of a second conduction type on a side of a wafer of a first conduction type; forming a front surface element structure on a first main surface of the wafer; forming a concave portion extending from a second main surface of the wafer to the first semiconductor region; forming a second semiconductor region of the second conduction type so as to be electrically connected to the first semiconductor region, the second main surface of the wafer being disposed on the second semiconductor region; and removing a portion of the first semiconductor region and cutting the wafer into chips, the removing being performed so that the first semiconductor region is removed such that a cut plane of the first semiconductor region is inclined with respect to the first main surface of the wafer, an angle between the cut plane and a bottom wall of the concave portion being an acute angle.