Method for fabrication of crack-free ceramic dielectric films

摘要

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.

主权项

1. A process for forming a crack-free dielectric comprising:
providing a substrate; depositing a first dielectric precursor sol-gel layer having a thickness from about 0.3 μm to about 1.0 μm on the substrate; heating the first dielectric precursor sol-gel layer at a preheat temperature from about 100° C. to about 200° C. for a preheat temperature heating time from about 1 minute to about 30 minutes; initiating a three temperature step-wise preheat treatment comprising increasing the temperature from about 275° C. to about 325° C. in a pre-pyrolysis step and maintaining the temperature at the pre-pyrolysis temperature for a pre-pyrolysis period of time; increasing the temperature from about 375° C. to about 425° C. in a first pyrolysis step and maintaining the temperature at the first pyrolysis temperature for a first pyrolysis period of time; increasing the temperature from about 425° C. to about 475° C. in a second pyrolysis step and maintaining the temperature at a second pyrolysis temperature for a second pyrolysis period of time; initializing a crystallization treatment comprising increasing the temperature from about 600° C. to about 800° C. for a period of time to crystallize at least one layer wherein all heat treatments were performed in an ambient atmosphere and wherein temperature changes are achieved by moving the film into different zones; and repeating the deposition step, initial heating step, pyrolyzing and crystallization steps to form a dielectric precursor layer having a total thickness from about 1.5 μm to about 20.0 μm on the substrate.