发明名称 |
Method of fabricating semiconductor apparatus with through-silicon via and method of fabricating stack package including the semiconductor chip |
摘要 |
In a semiconductor apparatus, a plurality of semiconductor chips including through-silicon vias are stacked in a vertical direction, wherein the through-silicon via formed in each semiconductor chip protrudes beyond heights of each semiconductor chip. |
申请公布号 |
US9355902(B2) |
申请公布日期 |
2016.05.31 |
申请号 |
US201414459520 |
申请日期 |
2014.08.14 |
申请人 |
SK HYNIX INC. |
发明人 |
Kim Chul;Lee Jong Chern |
分类号 |
H01L21/44;H01L21/48;H01L21/50;H01L21/4763;H01L21/768;H01L23/498;H01L25/065;H01L23/48;H01L23/00 |
主分类号 |
H01L21/44 |
代理机构 |
William Park & Associates Ltd. |
代理人 |
William Park & Associates Ltd. |
主权项 |
1. A method of fabricating a semiconductor apparatus, comprising the steps of:
forming a first semiconductor chip including a first through-silicon via, the first though-silicon via being protruded beyond heights of the first semiconductor chip; forming a first insulating layer having a first bump on the first semiconductor chip, wherein the first bump includes a first portion with a first line width and a second portion with a second line width being wider than the first line width, and the first through-silicon via is electrically contacted with the first portion of the bump; forming a second semiconductor chip including a second through-silicon via, the second though-silicon via being protruded beyond heights of the second semiconductor chip; and stacking the first semiconductor chip and the second semiconductor chip using a conductive connection member such that an upper surface of the conductive connection member is contacted to the second portion of the first bump and a bottom surface of the conductive connection member is contacted to a protruding portion of the second through-silicon via, wherein a diameter of the protruding portion is smaller than that of the conductive connection member. |
地址 |
Icheon-Si KR |