发明名称 |
Method for increasing adhesion of copper to polymeric surfaces |
摘要 |
Techniques disclosed herein a method and system for conditioning a polymeric layer on a substrate to enable adhesion of a metal layer to the polymeric layer. Techniques may include conditioning the polymeric layer with nitrogen-containing plasma to generate a nitride layer on the surface of the polymeric layer. In another embodiment, the conditioning may include depositing a CuN layer using a lower power copper sputtering process in a nitrogen rich environment. Following the condition process, a higher power copper deposition or sputtering process may be used to deposit copper onto the polymeric layer with good adhesion properties. |
申请公布号 |
US9355864(B2) |
申请公布日期 |
2016.05.31 |
申请号 |
US201414308420 |
申请日期 |
2014.06.18 |
申请人 |
TEL NEXX, INC.;TEL EPION INC. |
发明人 |
Seryogin Georgiy;Tetreault Thomas G.;Golovato Stephen N.;Chandrasekaran Ramya |
分类号 |
H01L21/44;H01L21/3205;H01L23/532;H01L21/285;H01L23/552 |
主分类号 |
H01L21/44 |
代理机构 |
Rothwell, Figg, Ernst & Manbeck, P.C. |
代理人 |
Rothwell, Figg, Ernst & Manbeck, P.C. |
主权项 |
1. A method for adhering copper to a polymeric material, comprising:
exposing a substrate to a nitrogen-containing environment to increase adhesion of first and second copper-containing layers to the substrate, the substrate comprising a tray of semiconductor devices that are at least partially covered with polymeric material; depositing, at a first power level, the first copper-containing layer onto the polymeric material surface present on the substrate; and depositing, at a second power level, the second copper-containing layer onto the first copper-containing layer, wherein the second power level is greater than the first power level. |
地址 |
Billerica MA US |