Sub-saturated atomic layer deposition and conformal film deposition

摘要

Methods and apparatus for depositing continuous thin films using plasma-activated sub-saturated atomic layer deposition are provided herein. According to various embodiments, pin-hole free continuous films may be deposited at thicknesses thinner than achievable with conventional methods. The methods and apparatus also provide high degree of thickness control, with films a per-cycle thickness tunable to as low as 0.1 Å in some embodiments. Further, the methods and apparatus may be used to provide films having improved properties, such as lower wet etch rate, in some embodiments.

主权项

1. A method for depositing a conformal film on a substrate surface, the method comprising:
providing a substrate comprising topographical features in a reaction chamber; introducing a first reactant in vapor phase into the reaction chamber under conditions allowing the first reactant to adsorb onto the substrate surface; introducing a dose of a second reactant in vapor phase into the reaction chamber for a dose time wherein the dose of the second reactant is a sub-saturated dose; and periodically exposing the substrate surface to plasma when the dose of the second reactant has ceased to drive a surface reaction between the first and second reactants on the substrate surface to form the film such that it conforms to the topographical features.