| 发明名称 | Non-volatile memory device | ||
| 摘要 | A non-volatile memory device includes: a floating gate having a plurality of fingers; a first coupling unit including an active control gate which overlaps with the floating gate in a vertical direction; a second coupling unit including a plurality of control plugs which overlap with the floating gate in a horizontal direction; and a control unit which electrically connects the active control gate to the control plugs and controls a bias to be applied to the active control gate. | ||
| 申请公布号 | US9355729(B2) | 申请公布日期 | 2016.05.31 |
| 申请号 | US201414334222 | 申请日期 | 2014.07.17 |
| 申请人 | SK Hynix Inc. | 发明人 | Park Sung-Kun |
| 分类号 | G11C11/34;G11C16/10;G11C16/04;H01L29/423;H01L29/788;H01L27/115 | 主分类号 | G11C11/34 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A non-volatile memory device, comprising: a floating gate having a plurality of fingers extended in a first direction; a first coupling unit including an active control gate formed below the floating gate; a second coupling unit including a plurality of line type control plugs extended in the first direction and formed between the plurality of fingers; and a control unit which electrically connects the active control gate to the line type control plugs and controls a bias to be applied to the active control gate. | ||
| 地址 | Gyeonggi-do KR | ||