| 摘要 |
The sensor has a pixel comprising insulated gates (G1i-G4i) covering a lightly doped epitaxial semiconducting layer (12). The gates are separated from gates of an adjacent pixel by narrow uncovered gaps (PH1i-PH4i) located above an N-type doped narrow region (14) that is covered by a P-type doped superficial region (16), where width of the narrow gap between the adjacent gates are such that internal potential of the narrow region is modified in the whole width of the narrow gap when one gate adjacent to the narrow gap receives alternation of high and low potentials. |
