Through silicon via processing method for lateral double-diffused MOSFETs

摘要

The present invention features methods for forming a field effect transistor on a semiconductor substrate having gate, source and drain regions, with the gate region having a lateral gate channel. A plurality of spaced-apart trenches or through semiconductor vias (TSV) each having an electrically conductive plug formed therein in electrical communication with the gate, source and drain regions are configured to lower the resistance of the bottom source. A contact trench is formed adjacent to the source region and shorts the source region and a body region. A source contact is in electrical communication with the source region; and a drain contact in electrical communication with the drain region, with the source and drain contacts being disposed on opposite sides of the lateral gate channel.

主权项

1. A method of forming a field effect transistor, said method comprising:
forming on a first side of a semiconductor substrate of a first conductivity type, a plurality of layers of material defining gate, source and drain regions, with said gate region having a lateral gate channel; generating, upon said semiconductor substrate, a layer of semiconductor material having a first conductivity type associated therewith; generating on said first semiconductor layer a second semiconductor layer, with said second semiconductor layer having multiple regions of differing conductivity types, defining a super-junction structure in electrical communication with said gate, source and drain regions; forming one or more trenches from a second side opposed to said first side of said semiconductor substrate extending from one or more orifices toward said first side of said semiconductor substrate with a controlled depth; and filling said plurality of one or more trenches with a conductive material forming a first contact in electrical communication with one of said source region and said drain region.