| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device that is suitable for miniaturization is provided. Alternatively, a highly reliable semiconductor device is provided. A semiconductor device including a capacitor and a transistor is provided. In the semiconductor device, the transistor includes a semiconductor layer, the semiconductor layer is positioned over the capacitor, and the capacitor includes a first electrode that is electrically connected to the transistor. | ||
| 申请公布号 | US9356054(B2) | 申请公布日期 | 2016.05.31 |
| 申请号 | US201414578919 | 申请日期 | 2014.12.22 |
| 申请人 | Semiconductor Energy Laboratory Co., Ltd. | 发明人 | Miyairi Hidekazu;Yamazaki Shunpei |
| 分类号 | H01L27/12;H01L29/78;H01L29/786 | 主分类号 | H01L27/12 |
| 代理机构 | Fish & Richardson P.C. | 代理人 | Fish & Richardson P.C. |
| 主权项 | 1. A semiconductor device comprising: a first transistor; a capacitor over the first transistor; and a second transistor over the capacitor, the second transistor overlapping with at least part of the capacitor, wherein the second transistor includes an oxide semiconductor layer, wherein the capacitor includes an electrode which is electrically connected to the second transistor, wherein the oxide semiconductor layer includes an opening, and wherein the electrode is in contact with the oxide semiconductor layer in the opening. | ||
| 地址 | Kanagawa-ken JP | ||