Semiconductor apparatus and manufacturing method of the same

摘要

A semiconductor apparatus according to an embodiment may include a first pipe gate divided by an isolation layer, a first pipe channel layer buried in the first pipe gate, a second pipe gate covering the first pipe channel layer, the first pipe gate and the isolation layer and a second pipe channel layer buried in the second pipe gate.

主权项

1. A semiconductor apparatus, comprising:
a first pipe gate divided by an isolation layer; a first pipe channel layer buried in the first pipe gate; a second pipe gate covering the first pipe channel layer, the first pipe gate and the isolation layer, wherein the second pipe gate is in contact with the first pipe gate and the isolation layer; and a second pipe channel layer buried in the second pipe gate.