Sensing circuits for use in low power nanometer flash memory devices

摘要

Improved sensing circuits for use in low power nanometer flash memory devices are disclosed.

主权项

1. A sensing circuit for use in a memory device, comprising:
a memory data read block for sensing a selected memory cell; a memory reference read block for sensing a reference memory cell; a differential amplifier block comprising a first capacitor comprising a first terminal and a second terminal, a second capacitor comprising a first terminal and a second terminal, a precharge circuit for charging the second terminal of the first capacitor and the second terminal of the second capacitor prior to a sensing operation, and an output; wherein the first terminal of the first capacitor is connected to the memory data read block and the second terminal of the first capacitor is connected to the differential amplifier block and the first terminal of the second capacitor is connected to the memory reference read block and the second terminal of the second capacitor is connected to the differential amplifier block; wherein during the sensing operation the output of the differential amplifier block indicates a value stored in the selected memory cell.