| 发明名称 | Memory and logic device and methods for performing thereof | ||
| 摘要 | In accordance with one exemplary embodiment of the present technique, there is disclosed a spins selective device, including a first layer comprising a ferromagnetic material. The spin selective device further includes a second layer coupled to the first layer. The second layer includes at least one molecule having a specified chirality, such that when an electrical current flows between the first layer and the second layer one or more regions of the ferromagnetic material become magnetically polarized along a certain direction. | ||
| 申请公布号 | US9355698(B2) | 申请公布日期 | 2016.05.31 |
| 申请号 | US201314385006 | 申请日期 | 2013.03.13 |
| 申请人 | YEDA RESEARCH AND DEVELOPMENT CO. LTD.;YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD. | 发明人 | Naaman Ron;Paltiel Yossef;Kober Sivan;Gotesman Gilad |
| 分类号 | G11C11/00;G11C11/16;B82Y10/00;G11C11/56;G11C13/00;H01L43/10;H03K19/00;H01L51/00;H01L51/05;H01L29/06;H01L27/28 | 主分类号 | G11C11/00 |
| 代理机构 | Browdy and Neimark, PLLC | 代理人 | Browdy and Neimark, PLLC |
| 主权项 | 1. A device for selecting spin, comprising: a first layer comprising a ferromagnetic material; and a second layer coupled to the first layer, wherein the second layer comprises at least one molecule having a specified chirality, such that when electrical current flows between the first layer and the second layer one or more regions of the ferromagnetic material become magnetically polarized along a certain direction; the direction of the magnetically polarized regions of the one or more regions comprises writable data that is storable on the device. | ||
| 地址 | Rehovot IL | ||