| 发明名称 | Semiconductor device and method of manufacturing the same | ||
| 摘要 | A method of manufacturing a semiconductor device according to one aspect of the present invention includes a step of forming a first layer of InAlN, a step of forming a second layer of InAlGaN on the first layer under a growth temperature higher than that of the first layer, and a step of forming a third layer of GaN, AlGaN or InGaN under a growth temperature higher than that of the first layer. | ||
| 申请公布号 | US9355843(B2) | 申请公布日期 | 2016.05.31 |
| 申请号 | US201514810023 | 申请日期 | 2015.07.27 |
| 申请人 | Sumitomo Electric Industries, Ltd. | 发明人 | Yui Keiichi;Nakata Ken;Kouchi Tsuyoshi;Makabe Isao |
| 分类号 | H01L21/02;H01L29/43;H01L29/66;H01L29/778;H01L29/20 | 主分类号 | H01L21/02 |
| 代理机构 | Venable LLP | 代理人 | Venable LLP ;Sartori Michael A. |
| 主权项 | 1. A method of manufacturing a semiconductor device, the method comprising: introducing a substrate in a chamber; and forming an InAlGaN layer on the substrate, the InAlGaN layer having an upper side and a lower side, wherein an In composition of the upper side of the InAlGaN layer is smaller than that of the lower side of the InAlGaN layer, wherein a supply amount of an In containing gas for source gases of the upper side of the InAlGaN layer is greater than that of the lower side of the InAlGaN layer, wherein the growth temperature of the upper side of the InAlGaN layer is higher than that of the lower side of the InAlGaN layer. | ||
| 地址 | Osaka-shi JP | ||