Semiconductor arrangement

摘要

A semiconductor arrangement includes a first semiconductor device including a first type region having a first conductivity type and a second type region having a second conductivity type. The semiconductor arrangement includes a second semiconductor device adjacent the first semiconductor device. The second semiconductor device includes a third type region having a third conductivity type and a fourth type region having a fourth conductivity type. The semiconductor arrangement includes a first insulator layer including a first insulator portion around at least some of the first semiconductor device and a second insulator portion around at least some of the second semiconductor device. The first insulator portion has a first insulator height, and the second insulator portion has a second insulator height. The first insulator height is different than the second insulator height. A method of forming a semiconductor arrangement is provided.

主权项

1. A semiconductor arrangement comprising:
a first semiconductor device comprising:
a first type region having a first conductivity type, a second type region having a second conductivity type, and a first channel region between the first type region and the second type region; a second semiconductor device adjacent the first semiconductor device, the second semiconductor device comprising:
a third type region having a third conductivity type, a fourth type region having a fourth conductivity type, and a second channel region between the first type region and the second type region; a first insulator layer comprising a first insulator portion having a first sidewall in contact with the first semiconductor device and a second insulator portion having a second sidewall in contact with the second semiconductor device, the first sidewall having a first insulator height and the second sidewall having a second insulator height, wherein the first insulator height is different than the second insulator height; and a dielectric layer over a top surface of the first insulator layer, the dielectric layer having a first sidewall in contact with the first channel region and a second sidewall in contact with the second channel region.