发明名称 Semiconductor package interconnections and method of making the same
摘要 A semiconductor package according to some examples of the disclosure may include a base with a first redistribution layer on one side, first and second side by side die attached to the base on an opposite side from the first redistribution layer, an interposer attached to active sides of the first and second die to provide an interconnection between the first and second die, a plurality of die vias extending from the first and second die to a second redistribution layer on a surface of the package opposite the first redistribution layer, and a plurality of package vias extending through the package between the first and second redistribution layers.
申请公布号 US9355963(B2) 申请公布日期 2016.05.31
申请号 US201414498076 申请日期 2014.09.26
申请人 QUALCOMM INCORPORATED 发明人 Kim Dong Wook;Lee Jae Sik;We Hong Bok;Song Young Kyu;Kim Chin-Kwan;Hwang Kyu-Pyung;Gu Shiqun
分类号 H01L23/538;H01L21/48;H01L21/56 主分类号 H01L23/538
代理机构 Muncy, Geissler, Olds & Lowe, P.C. 代理人 Muncy, Geissler, Olds & Lowe, P.C.
主权项 1. A semiconductor package, comprising: a base having a first side and a second side opposite the first side; a first redistribution layer on the first side of the base, the first redistribution layer configured to couple the base with an external device; a first die attached to the second side of the base with an active side of the first die facing away from the base; a second die attached to the second side of the base adjacent the first die with an active side of the second die facing away from the base; an interposer attached to the active side of the first die and the active side of the second die; an encapsulation layer encapsulating the second side of the base, the first die, the second die, and the interposer; a first plurality of vias coupled to the first die; a second plurality of vias coupled to the second die, the first plurality of vias and the second plurality of vias extending partially through the encapsulation layer; and a third plurality of vias extending through the encapsulation layer and the base.
地址 San Diego CA US