发明名称 |
Method for producing high-purity polycrystalline silicon |
摘要 |
The present invention provides technology for realizing higher purification of a polycrystalline silicon. First, trichlorosilane is prepared as a sample (S101) and then the carbon-containing impurities content in the trichlorosilane is analyzed by GC/MS-SIM method (S102). The quality of the trichlorosilane is determined based on the analysis results (S103) and the trichlorosilane determined to be a good material (S103: Yes) is used as the raw material for producing a high-purity polycrystalline silicon by CVD method (104). In case, the trichlorosilane determined to be a bad material (S103: No) is not used as the raw material for producing a polycrystalline silicon. When the impurities analysis by GC/MS-SIM method is performed using, as a separation column, a column having a non-polar column and a medium-polar column connected in series with each other, it is possible to simultaneously perform both of the separation of chlorosilanes and hydrocarbons and the separation of chlorosilanes and methylsilanes. |
申请公布号 |
US9355918(B2) |
申请公布日期 |
2016.05.31 |
申请号 |
US201314407255 |
申请日期 |
2013.06.13 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
Funazaki Kazunori;Sato Kazuomi;Miyao Shuichi |
分类号 |
G01R31/26;H01L21/66;C01B33/03;C01B33/035;G01N33/00;H01L21/02 |
主分类号 |
G01R31/26 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A method for producing a high-purity polycrystalline silicon from chlorosilane by CVD, comprising:
performing a quality determination on a trichlorosilane raw material by analyzing a content of carbon-containing impurities in the trichlorosilane by gas chromatography/mass spectrometry-selected ion monitoring (GC/MS-SIM), the carbon-containing impurities comprising methyldichlorosilane and isopentane, and setting trichlorosilane satisfying conditions, which are quality determination criteria, based on permissible values of the content of carbon-containing impurities, wherein the permissible values are provided on the basis of a permissible value of the content of carbon in an objective polycrystalline silicon. |
地址 |
Chiyoda-ku JP |