发明名称 |
Structure and method for forming CMOS with NFET and PFET having different channel materials |
摘要 |
Embodiments of the present invention provide an improved structure and method for forming CMOS field effect transistors. In embodiments, silicon germanium (SiGe) is formed on a PFET side of a semiconductor structure, while silicon is disposed on an NFET side of a semiconductor structure. A narrow isolation region is formed between the PFET and NFET. The NFET fins are comprised of silicon and the PFET fins are comprised of silicon germanium. |
申请公布号 |
US9356046(B2) |
申请公布日期 |
2016.05.31 |
申请号 |
US201314088025 |
申请日期 |
2013.11.22 |
申请人 |
GlobalFoundries Inc. |
发明人 |
Cheng Kangguo;Doris Bruce B.;Holmes Steven J.;Khakifirooz Ali |
分类号 |
H01L27/12;H01L21/8238;H01L21/84;H01L27/092 |
主分类号 |
H01L27/12 |
代理机构 |
Heslin Rothenberg Farley & Mesiti P.C. |
代理人 |
Heslin Rothenberg Farley & Mesiti P.C. ;Blasiak George |
主权项 |
1. A method of forming a semiconductor structure, comprising:
forming a recess on a PFET side of a silicon-on-insulator (SOI) layer disposed on a buried oxide (BOX) layer, wherein the BOX layer is disposed on a semiconductor substrate, and wherein the recess extends partially into the SOI layer, thereby forming a recessed portion of the SOI layer on the PFET side of the SOI layer, and a non-recessed portion on an NFET side of the SOI layer; forming a gap in the semiconductor structure, wherein the NFET side is separated from the PFET side by the gap, and wherein the gap extends to, and terminates at a top level of the buried oxide layer; growing an epitaxial silicon germanium (SiGe) layer on the recessed portion of the SOI layer; converting the SOI layer on the PFET side to SiGe; and forming a plurality of fins in the SOI layer on the NFET side and forming a plurality of fins in the SiGe layer on the PFET side; and further comprising depositing an insulator into the gap, wherein the forming a plurality of fins is performed subsequent to the depositing an insulator in the gap. |
地址 |
KY |