Memory system comprising nonvolatile memory device and method of adjusting read voltage based on sub-block level program and erase status

摘要

A method of operating a nonvolatile memory device configured to erase a memory block in sub-block units comprises detecting state information of unselected sub-blocks associated with a selected sub-block comprising selected memory cells, adjusting a read bias of the selected memory cells based on the state information, and reading data from the selected memory cells according to the adjusted read bias. The state information indicates a number of the unselected sub-blocks having a programmed state or an erased state.

主权项

1. A method of operating a nonvolatile memory device configured to erase a memory block in sub-block units, comprising:
detecting a state information of unselected sub-blocks associated with a selected sub-block comprising selected memory cells; adjusting a read bias of the selected memory cells based on the state information; and reading data from the selected memory cells according to the adjusted read bias, wherein the state information indicates a number of the unselected sub-blocks having a programmed state or an erased state.