Semiconductor device

摘要

A semiconductor device including a nonvolatile memory cell realizes enhancement of reliability and convenience. The semiconductor device includes a nonvolatile memory unit that includes plural overwritable memory cells (CL), and a control circuit that controls access to the nonvolatile memory unit. The control circuit allocates one physical address to a chain memory array CY in the nonvolatile memory unit, for example. The control circuit performs writing to a memory cell (for example, CL0) that is apart of the chain memory array CY according to a first write command with respect to the physical address, and performs writing to a memory cell (for example, CL1) that is another part thereof according to a second write command with respect to the physical address.

主权项

1. A semiconductor device comprising:
a nonvolatile memory unit that includes a plurality of memory cells; and a control circuit that allocates a physical address to a logical address input from outside to perform access to the physical address of the nonvolatile memory unit, wherein the nonvolatile memory unit includes a plurality of first signal lines, a plurality of second signal lines that intersect the plurality of first signal lines, and a plurality of memory cell groups disposed at intersections of the plurality of first signal lines and the plurality of the second signal lines, each of the plurality of memory cell groups includes first to N-th (N is an integer of 2 or greater) memory cells, and first to N-th memory cell selection lines that respectively select the first to N-th memory cells, and the control circuit writes data to a first portion that includes M (M