发明名称 High voltage comparison circuit
摘要 A high voltage comparison circuit includes an input stage generating an intermediate signal as a result of a comparison between an input signal and a first voltage reference and an output stage configured to generate an output signal referenced to a second voltage reference (different from the first voltage reference) in response to the intermediate signal.
申请公布号 US9356587(B2) 申请公布日期 2016.05.31
申请号 US201514622322 申请日期 2015.02.13
申请人 STMicroelectronics S.r.l. 发明人 Mirabella Ignazio Bruno;Pulvirenti Francesco
分类号 H03K5/22;H03K5/153;H03K5/125 主分类号 H03K5/22
代理机构 Gardere Wynne Sewell LLP 代理人 Gardere Wynne Sewell LLP
主权项 1. A high voltage comparison circuit, comprising: an input stage arranged between a supply voltage node and a first voltage reference node, said input stage configured to receive an input voltage signal and comprising a voltage comparator configured to provide an intermediate signal at an output terminal of the input stage as a result of a comparison between the input voltage signal and a first voltage at said first voltage reference node; and an output stage arranged between said supply voltage node and a second voltage reference node configured to receive a second voltage different from said first voltage, said output stage configured to receive said intermediate signal and to provide an output voltage signal which is in response to said intermediate signal, wherein said voltage comparator comprises: a first-type MOSFET transistor and a second n-type MOSFET transistor having their gate terminals connected together to a common-gate node, said second n-type MOSFET transistor being configured as a diode, anda first resistor and a second resistor each connected in series with a source terminal of the first and second n-type MOSFET transistors, respectively, and wherein said input stage comprises: a voltage buffer through which the input voltage signal is received, anda pass-gate configured to receive the input voltage signal before the input signal is received by said voltage buffer, wherein said pass-gate comprises an n-type MOSFET transistor having a gate terminal connected to the common-gate node.
地址 Agrate Brianza IT