发明名称 |
EPROM cell array, method of operating the same, and memory device including the same |
摘要 |
An EPROM cell array includes a cell array including multiple unit cells, each of which includes a MOSFET having a floating gate, and which are disposed in an array with a plurality of rows and a plurality of columns; multiple first selection lines each coupled with drains of unit cells, which are disposed on the same row among the multiple unit cells; and multiple second selection lines each coupled with sources of unit cells, which are disposed on the same column among the unit cells, wherein a selected unit cell to be programmed or read is selected by one of the multiple first selection lines, and one of the multiple second selection lines. |
申请公布号 |
US9355726(B2) |
申请公布日期 |
2016.05.31 |
申请号 |
US201414341505 |
申请日期 |
2014.07.25 |
申请人 |
SK Hynix Inc. |
发明人 |
Lee Yong Seop |
分类号 |
G11C11/34;G11C16/04;G11C17/14;G11C17/16;G11C17/18 |
主分类号 |
G11C11/34 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. An EPROM cell array comprising:
a cell array including multiple unit cells, each of which consists of a p-channel MOSFET having a P+ drain, a P+ source, a channel region between the P+ drain and P+ source, and a floating gate, and which are disposed in an array with a plurality of rows and a plurality of columns; multiple first selection lines each coupled with P+ drains of unit cells, which are disposed on the same row among the multiple unit cells; and multiple second selection lines each coupled with P+ sources of unit cells, which are disposed on the same column among the unit cells, wherein a selected unit cell is programmed by applying a program voltage and a ground voltage to a first selection line and a second selection line to be coupled with the selected unit cell, respectively, or by applying a program voltage and a ground voltage to the second selection line and the first selection line to be coupled with the selected unit cell, respectively. |
地址 |
Gyeonggi-do KR |