发明名称 EPROM cell array, method of operating the same, and memory device including the same
摘要 An EPROM cell array includes a cell array including multiple unit cells, each of which includes a MOSFET having a floating gate, and which are disposed in an array with a plurality of rows and a plurality of columns; multiple first selection lines each coupled with drains of unit cells, which are disposed on the same row among the multiple unit cells; and multiple second selection lines each coupled with sources of unit cells, which are disposed on the same column among the unit cells, wherein a selected unit cell to be programmed or read is selected by one of the multiple first selection lines, and one of the multiple second selection lines.
申请公布号 US9355726(B2) 申请公布日期 2016.05.31
申请号 US201414341505 申请日期 2014.07.25
申请人 SK Hynix Inc. 发明人 Lee Yong Seop
分类号 G11C11/34;G11C16/04;G11C17/14;G11C17/16;G11C17/18 主分类号 G11C11/34
代理机构 IP & T Group LLP 代理人 IP & T Group LLP
主权项 1. An EPROM cell array comprising: a cell array including multiple unit cells, each of which consists of a p-channel MOSFET having a P+ drain, a P+ source, a channel region between the P+ drain and P+ source, and a floating gate, and which are disposed in an array with a plurality of rows and a plurality of columns; multiple first selection lines each coupled with P+ drains of unit cells, which are disposed on the same row among the multiple unit cells; and multiple second selection lines each coupled with P+ sources of unit cells, which are disposed on the same column among the unit cells, wherein a selected unit cell is programmed by applying a program voltage and a ground voltage to a first selection line and a second selection line to be coupled with the selected unit cell, respectively, or by applying a program voltage and a ground voltage to the second selection line and the first selection line to be coupled with the selected unit cell, respectively.
地址 Gyeonggi-do KR