发明名称 Driving circuit and driving method
摘要 The present technology relates to a driving circuit and a driving method, in which power loss at the time of switching an FET (Field Effect Transistor) can be reduced with a simple circuit configuration.;A coil constitutes a resonance circuit together with an input capacitance at a gate of the FET. A switch (regeneration switch) turns on or off current flowing in the coil. A DC power source is a power source to replenish the resonance circuit with electric charge and is connected to the gate of the FET. A switch (replenish switch) turns on or off connection between the DC power source and the gate of the FET. The present technology is applicable to, for example, a power source that outputs AC voltage and current by switching operation.
申请公布号 US9356596(B2) 申请公布日期 2016.05.31
申请号 US201314412839 申请日期 2013.07.02
申请人 Sony Corporation 发明人 Komiyama Shinji;Fukuda Shinichi;Omae Uichiro
分类号 H03B1/00;H03K3/00;H03K17/687;H02J5/00;H02J7/02 主分类号 H03B1/00
代理机构 Chip Law Group 代理人 Chip Law Group
主权项 1. A driving circuit for an FET (Field Effect Transistor), comprising: a coil constituting a resonance circuit together with an input capacitor at a gate of the FET; a first switch configured to turn on or off current flowing in the coil; a DC power source connected to the gate of the FET through a first resistor, in order to replenish the resonance circuit with electric charge; and a second switch, connected in series with the first resistor, configured to turn on or off connection between the DC power source and the gate of the FET.
地址 Tokyo JP
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