发明名称 |
Driving circuit and driving method |
摘要 |
The present technology relates to a driving circuit and a driving method, in which power loss at the time of switching an FET (Field Effect Transistor) can be reduced with a simple circuit configuration.;A coil constitutes a resonance circuit together with an input capacitance at a gate of the FET. A switch (regeneration switch) turns on or off current flowing in the coil. A DC power source is a power source to replenish the resonance circuit with electric charge and is connected to the gate of the FET. A switch (replenish switch) turns on or off connection between the DC power source and the gate of the FET. The present technology is applicable to, for example, a power source that outputs AC voltage and current by switching operation. |
申请公布号 |
US9356596(B2) |
申请公布日期 |
2016.05.31 |
申请号 |
US201314412839 |
申请日期 |
2013.07.02 |
申请人 |
Sony Corporation |
发明人 |
Komiyama Shinji;Fukuda Shinichi;Omae Uichiro |
分类号 |
H03B1/00;H03K3/00;H03K17/687;H02J5/00;H02J7/02 |
主分类号 |
H03B1/00 |
代理机构 |
Chip Law Group |
代理人 |
Chip Law Group |
主权项 |
1. A driving circuit for an FET (Field Effect Transistor), comprising:
a coil constituting a resonance circuit together with an input capacitor at a gate of the FET; a first switch configured to turn on or off current flowing in the coil; a DC power source connected to the gate of the FET through a first resistor, in order to replenish the resonance circuit with electric charge; and a second switch, connected in series with the first resistor, configured to turn on or off connection between the DC power source and the gate of the FET. |
地址 |
Tokyo JP |