| 摘要 |
PROBLEM TO BE SOLVED: To provide a sintered body exhibiting excellent resistance to a halogen plasma and useful as a constitutional unit of a semiconductor manufacturing device such as an etching device.SOLUTION: The sintered body contains oxyfluoride of yttrium. The oxyfluoride of yttrium is preferably YOF and/or YOF. The sintered body preferably has relative density of 70% or more and open porosity of 10% or less. Also preferably linear thermal expansion percentage at 200 to 400°C of 2.0×10/K to 8.0×10/K and three point flexure strength of 10 MPa to 300 MPa.SELECTED DRAWING: None |
