发明名称 |
PRODUCTION METHOD OF SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT APPARATUS AND PROGRAM |
摘要 |
PROBLEM TO BE SOLVED: To adjust a work function, and to form a conductive thin film having a low work function value.SOLUTION: A program method of a semiconductor device has steps for: storing a substrate into a treatment chamber; supplying onto the substrate in time sharing in a prescribed number of times, halogen-based raw material gas containing a first element, first reaction gas containing a second element, and second reaction gas containing a third element which is a homologous element of the second element, to thereby form a film containing the first element, the second element and the third element on the substrate; and carrying out the substrate from the treatment chamber.SELECTED DRAWING: Figure 5 |
申请公布号 |
JP2016098423(A) |
申请公布日期 |
2016.05.30 |
申请号 |
JP20140238144 |
申请日期 |
2014.11.25 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
NAKATANI KIMIHIKO;HARADA KAZUHIRO;KITAMURA TADASHI |
分类号 |
C23C16/34;H01L21/28;H01L21/31;H01L21/318;H01L21/336;H01L29/78 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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