发明名称 PRODUCTION METHOD OF SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT APPARATUS AND PROGRAM
摘要 PROBLEM TO BE SOLVED: To adjust a work function, and to form a conductive thin film having a low work function value.SOLUTION: A program method of a semiconductor device has steps for: storing a substrate into a treatment chamber; supplying onto the substrate in time sharing in a prescribed number of times, halogen-based raw material gas containing a first element, first reaction gas containing a second element, and second reaction gas containing a third element which is a homologous element of the second element, to thereby form a film containing the first element, the second element and the third element on the substrate; and carrying out the substrate from the treatment chamber.SELECTED DRAWING: Figure 5
申请公布号 JP2016098423(A) 申请公布日期 2016.05.30
申请号 JP20140238144 申请日期 2014.11.25
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NAKATANI KIMIHIKO;HARADA KAZUHIRO;KITAMURA TADASHI
分类号 C23C16/34;H01L21/28;H01L21/31;H01L21/318;H01L21/336;H01L29/78 主分类号 C23C16/34
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