发明名称 SUPPORT SUBSTRATE, COMPOSITE SUBSTRATE, AND MANUFACTURING METHOD OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide a support substrate and a composite substrate containing the support substrate and a semiconductor film that are favorably used for manufacturing a semiconductor wafer having few warps, and to provide a manufacturing method of a semiconductor wafer using the support substrate and the composite substrate.SOLUTION: A support substrate 11 contains an aluminum atom, a silicon atom, alkali earth metal atom, and inevitable impurity metal atoms other than these atoms, in which the content of the alkali earth metal atom is 0.001 mass% or more and 10 mass% or less and the content of a zirconium atom, one of the inevitable impurity metal atoms is less than 0.001 mass%. The support substrate 11 includes a mullite phase of 35 mass% or more and 65 mass% or less and an alumina phase of 35 mass% or more and 65 mass% or less as a crystal phase. The composite substrate 1 includes the support substrate 11 and a semiconductor film 13 arranged on the principal plane 11m side of the support substrate 11.SELECTED DRAWING: Figure 2
申请公布号 JP2016098136(A) 申请公布日期 2016.05.30
申请号 JP20140235546 申请日期 2014.11.20
申请人 SUMITOMO ELECTRIC IND LTD 发明人 SATO KAZUNARI;YAMAMOTO YOSHIYUKI;HASEGAWA MIKITO;TSUJI YUTAKA;FUJII AKITO
分类号 C30B29/38;C30B25/18 主分类号 C30B29/38
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