发明名称 PLASMA PROCESSING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing device arranged so as to suppress the biasing of an electric field intensity along a circumferential direction of a slot plate, which is caused in a slow-wave plate owing to microwaves' reflected waves returned to the slow-wave plate from slots disposed along the circumferential direction of the slot plate.SOLUTION: A plasma processing device comprises: a process chamber which defines a processing space; a dielectric having an opposed face opposed to the processing space; a slot plate 30 provided on a face of the dielectric on the side opposite to the opposed face, and having slots 30a disposed along a circumferential direction centering at an axis X and serving to radiate microwaves for producing plasma through the dielectric toward the processing space; and a slow-wave plate 32 provided on the slot plate 30 so as to cover the slots 30a, extending along a radial direction of the slot plate 30 in all directions, centering at the axis X, and having extending parts 32b for supplying the microwaves to the respective slots 30a.SELECTED DRAWING: Figure 3
申请公布号 JP2016100283(A) 申请公布日期 2016.05.30
申请号 JP20140238113 申请日期 2014.11.25
申请人 TOKYO ELECTRON LTD 发明人 IWAO TOSHIHIKO
分类号 H05H1/46;C23C16/511;H01L21/304;H01L21/3065 主分类号 H05H1/46
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