| 摘要 |
PROBLEM TO BE SOLVED: To provide a protective circuit capable of protecting a low voltage resistance internal circuit from a bipolar high voltage and making a low voltage signal to pass through with a small circuit size without requiring any specific processes.SOLUTION: A P-channel type MOSFET and an N-channel type MOSFET formed by a CMOS process are connected in series. To a drain of one of the transistors, a high voltage signal and a low voltage signal are applied. A predetermined bias voltage is applied to both gates so that only a low voltage signal can pass both conducting paths.SELECTED DRAWING: Figure 2 |
