发明名称 PHOTOELECTRIC CONVERSION ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a photoelectric conversion element which is low-priced and small in element size and has sensitivity to light in a specific wavelength range by using only a general semiconductor manufacturing process.SOLUTION: A photoelectric conversion element comprises a first semiconductor layer (41) having a first conductivity type and a second semiconductor layer (42) which is formed on a surface of the first semiconductor layer (41) and has a second conductivity type, a light reception region of the second semiconductor layer (42) including a region which increases in impurity density from an outermost surface to a reverse surface in a depth direction from the outermost surface to the reverse surface.SELECTED DRAWING: Figure 1
申请公布号 JP2016100583(A) 申请公布日期 2016.05.30
申请号 JP20140239130 申请日期 2014.11.26
申请人 SHARP CORP 发明人 HOSOKAWA MAKOTO;KIKUTA MITSUHIRO
分类号 H01L31/10 主分类号 H01L31/10
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