发明名称 |
III Group III Nitride Heterostructure for Optoelectronic Device |
摘要 |
Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure. |
申请公布号 |
KR20160060749(A) |
申请公布日期 |
2016.05.30 |
申请号 |
KR20167010861 |
申请日期 |
2014.09.23 |
申请人 |
SENSOR ELECTRONIC TECHNOLOGY, INC. |
发明人 |
JAIN RAKESH;SHATALOV MAXIM S.;YANG JINWEI;DOBRINSKY ALEXANDER;SHUR MICHAEL;GASKA REMIGIJUS |
分类号 |
H01L33/00;H01L33/04;H01L33/06;H01L33/12;H01L33/14;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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