SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can inhibit resistance value variation caused when voltage applied between terminals of a resistor body composed of metal of non-metal is changed.SOLUTION: A semiconductor device 10 according to the present embodiment comprises: a substrate 1; a resistor body 5 which is formed above the substrate 1 and surrounded by an insulation layer 2; an intermediate dummy pattern 42 formed between the substrate 1 and the resistor body 5 and an upper dummy pattern 43 formed above the resistor body 5; and a plug 3 which connects the upper dummy pattern 43 and the intermediate dummy pattern 42 with the substrate 1. The resistor body 5 has a portion which overlaps the upper dummy pattern 43 and the intermediate dummy pattern 42 when viewed from the resistor body 5 side toward the substrate 1 side. A heat conductivity of each of the upper dummy pattern 43, the intermediate dummy pattern 42 and the plug 3 is higher than a heat conductivity of the insulation layer 2.SELECTED DRAWING: Figure 1