| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method of a polycrystalline silicon ingot capable of producing, with excellent controllability, a polycrystalline silicon ingot with low crystal defect density and of high quality preferable as an ingot for a solar cell, so as to provide a polycrystalline silicon ingot at a low cost with high quality, and a usage thereof.SOLUTION: A polycrystalline silicon lump 1 whose average crystal grain size is 15 mm or less is arranged on an upper face of a base plate of a crucible 3. Then a silicon raw material 2 is put in the crucible, and the silicon raw material put therein is fused and unidirectionally solidified to manufacture a polycrystalline silicon ingot.SELECTED DRAWING: Figure 3 |
