| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element manufacturing method which can reduce a density of crystal defects of a nitride semiconductor layer and simply manufacture the nitride semiconductor element.SOLUTION: A nitride semiconductor element manufacturing method comprises: a first nitride semiconductor layer lamination process of laminating on a top face of a substrate 11, a first nitride semiconductor layer 12 which has a thickness of not less than 10 nm and not more than 100 nm and in which a top face is +c plane and composed of a single crystal AlN; and a second nitride semiconductor layer lamination process of laminating on the top face of the first nitride semiconductor layer 12, a second nitride semiconductor layer 13 composed of InAlGaN(0≤X,0≤Y,X+Y<1). In the second nitride semiconductor layer lamination process, during lamination of the second nitride semiconductor layer 13, at least on a flat part 11b, a plurality of recesses 13a each having a shape of an inverted hexagonal pyramid or an inverted hexagonal truncated pyramid are formed on the second nitride semiconductor layer 13, and subsequently the second nitride semiconductor layer 13 is grown to achieve the flat top face.SELECTED DRAWING: Figure 5B |
