SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which inhibits thermal destruction occurring at a connection part of an active region and a termination region at the time of turn-off of the semiconductor device.SOLUTION: A semiconductor device using a silicon carbide substrate 30 comprises: an active region 15 which is a part of a silicon carbide substrate 30 and includes pn junction formed in the silicon carbide substrate 30 and a current flows when a voltage is applied to the semiconductor device; and a termination region 16 which is a part of the silicon carbide substrate 30 and formed along a circumference of the active region 15, in which a minority carrier life time in the active region 15 is longer than a minority carrier life time in the termination region 16.SELECTED DRAWING: Figure 2