| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which enables the suppression of warp even in the case of sealing a large-area thin substrate, and allows underfilling of a flip chip-mounted semiconductor element to be conducted adequately without causing a void in a sealing layer nor un-filling, and which can offer a semiconductor device superior in sealing performances, such as the reliability of heat resistance and moisture resistance.SOLUTION: A method for manufacturing a semiconductor device comprises: a sealing step where a base material-attached sealing material having a base material and a thermosetting resin layer formed on one surface of the base material is used to collectively seal an element-mount face of a semiconductor device-mounted substrate on which a semiconductor element is mounted by flip chip mounting. The sealing step includes: an integration step where the semiconductor element-mounted substrate is integrated with the base material-attached sealing material under a reduced pressure condition of a vacuum degree of 10 kPa or less; and a pressurizing step where a pressure of 0.2 MPa or larger is applied to the substrate thus integrated.SELECTED DRAWING: Figure 1 |
