| 摘要 |
PROBLEM TO BE SOLVED: To reduce the variation in temperature in a wafer surface in film formation.SOLUTION: A film formation device according to an embodiment comprises: a rotation shaft; and a rotary stage connected to the rotation shaft, in which wafers are held by the rotary stage in which the wafers are placed on workpiece-setting areas arrayed in a circumferential direction around the central axis of the rotation shaft; a susceptor having an internal space in which the rotary stage is placed; a gas supply mechanism which forms a flow of a process gas along a direction orthogonal to the central axis from outside the rotary stage in the internal space; and a heat-insulating material provided on heat-insulating region in the internal space of the susceptor. The heat-insulating region is located outward from positions in the workpiece-setting regions closest to the central axis, and inward from positions of the workpiece-setting regions located farthest from the central axis.SELECTED DRAWING: Figure 3 |
