发明名称 PRODUCTION METHOD OF RECLAIMED SILICON CARBIDE POWDER, AND PRODUCTION METHOD OF SILICON CARBIDE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a production method of reclaimed silicon carbide powder having few impurities that uses a silicon carbide residual remaining after practicing a sublimation recrystallization method.SOLUTION: A production method of reclaimed silicon carbide powder reuses a silicon carbide residual remaining after sublimating silicon carbide powder 5 housed in a carbon crucible 1 by a sublimation recrystallization method as a sublimation object of the sublimation recrystallization method. The production method of reclaimed silicon carbide powder includes a separation step for separating a block object containing the silicon carbide residual from the carbon crucible 1 housing the silicon carbide residual, a crushing step for crushing the block object separated in the separation step to obtain a ground product, and a heating step for heating the ground product obtained in the crushing step to obtain reclaimed silicon carbide powder.SELECTED DRAWING: Figure 1
申请公布号 JP2016098162(A) 申请公布日期 2016.05.30
申请号 JP20140238598 申请日期 2014.11.26
申请人 TAIHEIYO CEMENT CORP 发明人 ISHIDA HIRONORI;MASUDA KENTA;NONAKA KIYOSHI
分类号 C30B29/36 主分类号 C30B29/36
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