THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor and a manufacturing method of the same, which can achieve downsizing even though using an oxide semiconductor layer.SOLUTION: A thin film transistor comprises: an oxide semiconductor layer 12 including a channel region 12c, and a source region 12s and a drain region 12d which are located to sandwich the channel region 12c; a gate electrode 13 arranged at a distance from and opposite to the channel region 12c of the oxide semiconductor layer 12; a source electrode 14 electrically connected to the source region 12s of the oxide semiconductor layer 12; a drain electrode 15 electrically connected to the drain region 12d of the oxide semiconductor layer 12; an undercoat layer 17 arranged adjacent to the source region 12s and the drain region 12d of the oxide semiconductor layer 12; and a hydrogen block layer 27 which has a hydrogen concentration lower than that of the undercoat layer 17 and separates the undercoat layer 17 and the channel region 12c of the oxide semiconductor layer 12.SELECTED DRAWING: Figure 1