发明名称 PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing device and a plasma processing method which make possible to obtain a desired microwave oscillation frequency and spectrum characteristics with stability even at the beginning of a treatment in a process or in successively changing a process condition.SOLUTION: A plasma processing device for processing an object to be processed comprises: a process chamber for performing a plasma processing on an object to be processed loaded therein; a microwave oscillator 55; and a plasma-generating mechanism which uses microwaves emitted by the microwave oscillator 55 to generate plasma in the process chamber. The microwave oscillator 55 has: an output-distribution mechanism 106 which distributes one of outputs of microwaves emitted by the microwave oscillator 55 as an output for generating the plasma in the process chamber, and the other as an output to be absorbed by a dummy load 122 provided outside the process chamber; and a control part 110 which controls the distributing proportion of the microwave output distribution by the output-distribution mechanism 106.SELECTED DRAWING: Figure 2
申请公布号 JP2016100312(A) 申请公布日期 2016.05.30
申请号 JP20140239065 申请日期 2014.11.26
申请人 TOKYO ELECTRON LTD 发明人 KANEKO KAZUFUMI;HASHIMOTO YUNOSUKE;ISHIDA YOHEI
分类号 H05H1/46;C23C16/511;C23C16/52;H01L21/3065;H01L21/31 主分类号 H05H1/46
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